| PART |
Description |
Maker |
| K9K4G08U1M K9F2G16U0M K9F2G08U0M |
256M x 8 Bit / 128M x 16 Bit / 512M x 8 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K9K2G08U0M K9K2G08U0M-YCB0 K9K2G16U0M-PCB0 K9K2G16 |
256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K9W4G08U1M K9K2G16U0M K9W4G16U1M K9K2G08Q0M K9K2G0 |
256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K9K2G08U0M-F K9K2G08U0M-V K9K2G08Q0M-P K9K2G08Q0M- |
256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| TC58NVG1S3ETA00 |
2 GBIT (256M x 8 BIT) CMOS NAND E2PROM
|
Toshiba Semiconductor
|
| MX23C8000 MX23C8000MC-10 MX23C8000MC-12 MX23C8000M |
8M-BIT [1M x 8] CMOS MASK ROM 1M X 8 MASK PROM, 150 ns, PDIP32
8M-BIT [1M x 8] CMOS MASK ROM 1M X 8 MASK PROM, 120 ns, PDIP32
8M-BIT [1M x 8] CMOS MASK ROM 1M X 8 MASK PROM, 200 ns, PQCC32
8M-BIT [1M x 8] CMOS MASK ROM 1M X 8 MASK PROM, 100 ns, PQCC32
8M-BIT [1M x 8] CMOS MASK ROM 1M X 8 MASK PROM, 120 ns, PQCC32
|
Macronix International Co., Ltd.
|
| AT45DB2562NBSP AT45DB2562 |
256M bit, 2.7-Volt Only Dual-Interface Flash. This document is only available under NDA. Please cont
From old datasheet system
|
Atmel Corp
|
| MX23C4000 MX23C4000MC-10 MX23C4000MC-12 MX23C4000M |
4M-BIT MASK ROM (8 BIT OUTPUT) 512K X 8 MASK PROM, 150 ns, PDSO32
4M-BIT MASK ROM (8 BIT OUTPUT) 512K X 8 MASK PROM, 90 ns, PDIP32
|
Macronix International Co., Ltd.
|
| MX23L3211TC-90 |
32M-BIT MASK ROM (8/16-BIT OUTPUT) 2M X 16 MASK PROM, 90 ns, PDSO48
|
Macronix International Co., Ltd.
|
| K9E2G08B0M K9E2G08B0M-F K9E2G08B0M-FCB0 K9E2G08B0M |
256M x 8 Bits NAND Flash Memory
|
Samsung semiconductor
|
| MX23L6454 |
64M-BIT Low Voltage / Serial Mask ROM Memory with 50MHz SPI Bus Interface
|
Macronix International
|
| MX23L6410AMC-90G |
64M-BIT PAGE MODE MASK ROM 4M X 16 MASK PROM, 90 ns, PDSO44
|
Macronix International Co., Ltd.
|
